Toshiba Electronic Devices & Storage Corporation Adds Second-Generation 650V SiC Schottky Barrier Diodes in DPAK Surface-Mount Type Package
Toshiba Electronic Devices & Storage Corporation (TDSC)
has enhanced its diode portfolio with the addition of six Schottky barrier
diodes (SBDs) fabricated with silicon carbide (SiC) and housed in surface-mount
packages. Volume shipments start today.
Until now, TDSC has focused on SiC SBDs in through-hole
packages. The addition of TDSC’s first SiC SBDs in surface-mount packages
(nicknamed DPAK) meets customer needs to reduce system size and thickness.
The new SiC SBDs incorporate Toshiba’s latest
second-generation chip, which delivers improvements in surge peak forward
current (IFSM) and figure of merit (VF•Qc*1).
The devices offer enhanced ruggedness and low loss, which helps to improve
system efficiency and simplify thermal design.
TDSC will continue to expand its product portfolio in order
to help improve the efficiency and reduce the size of communications equipment,
servers, inverters and other products.
Features
·
High surge peak forward current: Approx. 7 to
9.5 times the current rating, IF(DC).
·
Low figure of merit (VF•Qc):
About 1/3 lower than first generation products, indicating high efficiency.
·
Surface-mount package: Enables auto mounters and
helps to reduce system size and thickness.
Applications
The new SiC SBDs are suitable for a wide range of commercial
and industrial applications, including PFC circuitry in high-efficiency power
supplies.
·
Consumer and OA products: power supply for large
screen 4K LCD & OLED TV sets, projectors, multifunction copiers, etc.
·
Industrial equipment: power supply for
telecommunication base stations, PC servers, solar microinverters, etc.
·
For circuits: power factor correction (PFC)
circuits; micro inverter circuits; chopper circuits (various power supplies of
hundreds of watts or more).
·
Free-wheel diode for switching device.
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Main Specifications
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Package
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Absolute Maximum Ratings
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Electrical Characteristics
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Forward
DC current |
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Non-repetitive
Peak Forward Surge Current |
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Total Power
Dissipation |
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Junction
temperature |
Forward
Voltage |
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Figure
of merit |
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Junction
Capacitance |
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Total
Capacitive Charge |
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Symbol
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IF(DC)
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IFSM
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Ptot
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Tj
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VF
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VF•Qc
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Cj
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QC
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Unit
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(A)
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(A)
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(W)
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(℃)
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(V)
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(V•nC)
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(pF)
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(nC)
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Value
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Max.
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Max.
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Max.
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Max.
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－
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Typ.
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Typ.
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Typ.
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Product/ Condition
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－
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@ Half-sine
Wave t=10ms |
Tc=25℃
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－
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@ IF(DC)
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－
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@ VR=
1V
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@VR=
400V
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Surface-mount type DPAK /
Equivalent to TO-252
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TRS2P65F
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2
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19
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34.0
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175
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1.45
(Typ.)
1.60
(Max.)
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8.4
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85
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5.8
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TRS3P65F
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3
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26
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37.5
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11.7
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120
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8.1
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TRS4P65F
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4
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33
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41.0
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15.1
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165
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10.4
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TRS6P65F
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6
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45
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48.3
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21.9
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230
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15.1
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TRS8P65F
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8
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58
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55.5
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28.6
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300
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19.7
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TRS10P65F
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10
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70
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62.5
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35.4
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400
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24.4
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Note:
[1] Qc : Electric charge amount of capacitance Cj between 0.1 V and 400 V.
[1] Qc : Electric charge amount of capacitance Cj between 0.1 V and 400 V.
Follow the link below for more on TDSC’s SiC Schottky
Barrier Diode line-up.
https://toshiba.semicon-storage.com/ap-en/product/diode/sic.html
https://toshiba.semicon-storage.com/ap-en/product/diode/sic.html
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